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built-in sic mosfet isolation fly-back converter qr method output 48 w 24 v

the bm2scq123t-evk-001 evaluation board outputs 24 v voltage from the input of 300 to 900 vdc. the output current supplies up to 2.0 a. the bm2scq123t which is quasi-resonant method dc/dc converter ic built-in 1700 v sic mosfet (silicon-carbide) is used.

  • the bm2scq123t contributes to low emi by soft switching in quasi-resonant method.
  • the integrated 1700 v 4 a sic mosfet contributes to ease of power supply design. built-in burst mode reduces power loss at light loads.
  • the bm2scq123t is a ranked product that guarantees a long-term supply for the industrial equipment market.
bm2scq123t-evk-001

design resources

 
  • bm2scq123t-evk-001

specifications

 
board number input voltage output voltage maximum output power output current range stand-by power efficiency output ripple voltage size operating temperature
bm2scq123t-evk-001 300 to 900vdc 24.0v 48w iout=2a 0.0 to 2.0a *1 310mw iout=0a 90% iout=2a 100mvpp *2 60mm x 160mm -10 to 65deg.c
remarks:
*1 please adjust operating time, within any parts surface temperature under 105 °c
*2 not include spike noise

distribution inventory

 
board number distributor quantity available
bm2scq123t-evk-001 2
2
2
1
inquiry 1

key components

 
board number part number product category datasheet status spice ltspice thermal model symbol & footprint 3d step samacsys ecad library calc tool rohm solution simulator
bm2scq123t-evk-001 1ss355vm switching diodes recommended -
bm2scq123t-evk-001 bm2scq123t-lbz ac/dc converters ics recommended -
bm2scq123t-evk-001 ltr100jzpfl current detection resistors recommended -
bm2scq123t-evk-001 rfuh25tb3snz fast recovery diodes active -
bm2scq123t-evk-001 rre02vsm4s rectifier diodes recommended -