sct4018ke-凯发线上登陆下载网址
1200v, 81a, 3引脚thd, 沟槽结构, sic mosfet
sct4018ke
主要规格
特性:
drain-source voltage[v]
1200
drain-source on-state resistance(typ.)[mω]
18
generation
4th gen (trench)
drain current[a]
81
total power dissipation[w]
312
junction temperature(max.)[°c]
175
storage temperature (min.)[°c]
-40
storage temperature (max.)[°c]
175
package size [mm]
16x21 (t=5.2)
特点:
- low on-resistance
- fast switching speed
- fast reverse recovery
- easy to parallel
- simple to drive
- pb-free lead plating ; rohs compliant